The fabricated devices exhibited forming free bipolar resistive switching with high ON OFF resistance ratio, low operating voltage and reliable endurance and retention characteristics. Electrical stability under repeated bending cycles was systematically investigated to evaluate mechanical durability, demonstrating minimal degradation in switching parameters under moderate strain. Multilevel resistance states were also achieved through compliance current modulation, indicating potential for analog weight storage required in neuromorphic computing.

The switching mechanism is attributed to the formation and rupture of oxygen vacancy conductive filaments within the NiO layer, supported by current voltage characteristics and material analysis. The combination of mechanical flexibility, stable switching behavior and multilevel operation highlights the suitability of NiO based flexible ReRAM devices for wearable and edge neuromorphic systems. This study provides insight into material engineering and device optimization strategies for integrating flexible memristive elements into future neuromorphic hardware platforms.